I'm constantly researching and learning new physics and engineering principles. At Stanford, I have been
a part of many research projects, ranging from studying thermal physics to building new transistors.
This page details some of my highlights. Go to the publications page for more details.
Sidewall/Vertical Growth of MoS2
I'm very excited about this project as it shows a major difference between 2D materials (such as MoS2) and
bulk materials like Si and InGaAs. The Scanning Electron Microscopy (SEM) image on the right displays monolayer (0.6 nm thick!)
Mo2 deposited directly on SiO2/Si sidewall. This could have huge implications for technologies like
3D NAND flash and DRAM, which require high-density transistors (i.e. vertical) for scaling and reducing costs.
2D materials have potential to continue Moore's Law owning to their atomically thin nature.
My research has demonstrated for the first time that the 2D material MoS2 can actually
meet industry requirements.
Another one of my research projects focused on ultra-low power transistors using "steep switching",
a phenomena where transistors can switch off and on by applying very small changes in gate voltage.
The industry standard MOSFET switches at minimum 60 mV/decade, but my device switched at 5 mV/decade!
The mechanism for the low switching is impact ionization. Devices such as mine open the possibility
of low power logic/memory transistors and highly sensitive sensors.