A. Sanne, H.C. Prakash, S. Kang, C. McClellan, C.M. Corbet, S.K. Banerjee, “Poly (methylmethacrylate) as a self-assembled gate dielectric for graphene field-effect transistors,” APL 2014 |
2014 |
C.M. Corbet, C. McClellan, K. Kim, S. Sonde, E. Tutuc, S.K. Banerjee, “Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms,” ACS Nano 2014 |
2014 |
C.M. Corbet*, C. McClellan*, A. Rai, S. Sonde, E. Tutuc, S.K. Banerjee, “Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS 2 ,” ACS Nano 2014 |
2014 |
E. Yalon, C.J. McClellan, K.K.H. Smithe, M. Muñoz Rojo, R.L. Xu, S.V. Suryavanshi, A.J. Gabourie, C.M. Neumann, F. Xiong, A.B. Farimani, E. Pop, "Energy Dissipation in Monolayer MoS2 Electronics," Nano Letters 17, 3429–3433 (2017) |
2017 |
L. Cai*, C.J. McClellan*, A.L. Koh, H. Li, E. Yalon, E. Pop, X. Zheng, "Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2," Nano Letters 17, 3854–3861 (2017) |
2017 |
E. Yalon, Ö.B. Aslan, K.K.H. Smithe, C.J. McClellan, S.V. Suryavanshi, F. Xiong, A. Sood, C.M. Neumann, X. Xu, K.E. Goodson, T.F. Heinz, E. Pop, "Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry," ACS Appl. Mater. Interfaces 9, 43013-43020 (2017) |
2017 |
C.-H. Wang, J.A.C. Incorvia, C.J. McClellan, A.C. Yu, M.J Mleczko, E. Pop, H.-S.P. Wong, "Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts," Nano Letters 18, 2822-2827 (2018) |
2018 |
A. Sood, F. Xiong, S. Chen, H. Wang, D. Selli, J. Zhang, C.J. McClellan, J. Sun, D. Donadio, Y. Cui, E. Pop, K.E. Goodson, "An Electrochemical Thermal Transistor," Nature Comm. 9, 4510 (2018) |
2018 |
I.M. Datye, A.J. Gabourie, C.D. English, K.K.H. Smithe, C.J. McClellan, N.C. Wang, E. Pop, "Reduction of Hysteresis in MoS2 Transistors Using Pulsed Voltage Measurements," 2D Materials 6, 011004 (2019) |
2019 |
E. Barré, J.A.C. Incorvia, S.H. Kim, C.J. McClellan, E. Pop, H.-S.P. Wong, T.F. Heinz, "Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors," Nano Lett. 19, 770-774 (2019) |
2019 |