Publications Overview

During my time as a researcher at UT Austin and Stanford, I have been a part of several journal papers and given formal conference presentations. The blocks below list my publications and detailed statistics can be found on my Google Scholar page.

Conference and Formal Presentations

Citation (first authors only) Date
C. McClellan, C. Corbet, A. Rai, HCP Mova, E. Tutuc, S.K. Banerjee, "Rhenium Disulfide Depeletion-Load Inverter," APS March Meeting, Mar 2015, San Antonio TX 3/2015
C.J. McClellan, M.J. Mleczko, K.K.H, Smithe, Y. Nishi, E. Pop, "WTe2 as a Two-Dimensional (2D) Metallic Contact for 2D Semiconductors," IEEE Device Research Conference (DRC), Jun 2016, Univ. Delaware DE 6/2016
C. McClellan, L. Cai, E. Yalon, X. Zheng, E. Pop, "Record Current Density in Monolayer p-type WSe2 with Ultrathin MoO3 Hole Doping Layers," MRS Spring Meeting, Apr 2017, Phoenix AZ 4/2017
C.J. McClellan, E. Yalon, K.K.H. Smithe, S.V. Suryavanshi, E. Pop, "Effective n-type Doping of Monolayer MoS2 by AlOx," IEEE Device Research Conference (DRC), Jun 2017, Notre Dame, IN 6/2017
C.J. McClellan, E. Yalon, K. Smithe, S. Suryavanshi, E. Pop, "Effective n-type Doping of Monolayer MoS2 by AlOx," SRC TECHCON, Sep 2017, Austin TX (Best Paper in Session Award) 9/2017
C.J. McClellan, E. Yalon, L. Cai, S.V. Suryavanshi, X. Zheng, E. Pop, "Sub-Thermionic Steep Switching in Hole-Doped WSe2 Transistors," IEEE Device Research Conference (DRC), Jun 2018, Santa Barbara, CA 6/2018
C.J. McClellan, E. Yalon, L. Cai, S. Suryavanshi, X. Zheng, E. Pop, "Effective Hole Doping and Steep Switching in WSe2 Transistors," SRC TECHCON, Sep 2018, Austin TX (Best Presentation Award) 9/2018
C.J. McClellan, A.C. Yu, C.-H. Wang, H.-S.P. Wong, E. Pop, "Vertical Sidewall MoS2 Growth and Transistors," IEEE Device Research Conference (DRC), Jun 2019, Ann Arbor MI 6/2019


Journal Papers

Citation (* equal contribution) Date
A. Sanne, H.C. Prakash, S. Kang, C. McClellan, C.M. Corbet, S.K. Banerjee, “Poly (methylmethacrylate) as a self-assembled gate dielectric for graphene field-effect transistors,” APL 2014 2014
C.M. Corbet, C. McClellan, K. Kim, S. Sonde, E. Tutuc, S.K. Banerjee, “Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms,” ACS Nano 2014 2014
C.M. Corbet*, C. McClellan*, A. Rai, S. Sonde, E. Tutuc, S.K. Banerjee, “Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS 2 ,” ACS Nano 2014 2014
E. Yalon, C.J. McClellan, K.K.H. Smithe, M. Muñoz Rojo, R.L. Xu, S.V. Suryavanshi, A.J. Gabourie, C.M. Neumann, F. Xiong, A.B. Farimani, E. Pop, "Energy Dissipation in Monolayer MoS2 Electronics," Nano Letters 17, 3429–3433 (2017) 2017
L. Cai*, C.J. McClellan*, A.L. Koh, H. Li, E. Yalon, E. Pop, X. Zheng, "Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2," Nano Letters 17, 3854–3861 (2017) 2017
E. Yalon, Ö.B. Aslan, K.K.H. Smithe, C.J. McClellan, S.V. Suryavanshi, F. Xiong, A. Sood, C.M. Neumann, X. Xu, K.E. Goodson, T.F. Heinz, E. Pop, "Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry," ACS Appl. Mater. Interfaces 9, 43013-43020 (2017) 2017
C.-H. Wang, J.A.C. Incorvia, C.J. McClellan, A.C. Yu, M.J Mleczko, E. Pop, H.-S.P. Wong, "Unipolar n-Type Black Phosphorus Transistors with Low Work Function Contacts," Nano Letters 18, 2822-2827 (2018) 2018
A. Sood, F. Xiong, S. Chen, H. Wang, D. Selli, J. Zhang, C.J. McClellan, J. Sun, D. Donadio, Y. Cui, E. Pop, K.E. Goodson, "An Electrochemical Thermal Transistor," Nature Comm. 9, 4510 (2018) 2018
I.M. Datye, A.J. Gabourie, C.D. English, K.K.H. Smithe, C.J. McClellan, N.C. Wang, E. Pop, "Reduction of Hysteresis in MoS2 Transistors Using Pulsed Voltage Measurements," 2D Materials 6, 011004 (2019) 2019
E. Barré, J.A.C. Incorvia, S.H. Kim, C.J. McClellan, E. Pop, H.-S.P. Wong, T.F. Heinz, "Spatial Separation of Carrier Spin by the Valley Hall Effect in Monolayer WSe2 Transistors," Nano Lett. 19, 770-774 (2019) 2019